| PART |
Description |
Maker |
| K4X51323PC-8G |
16M x32 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PE-LG K4X56163PE K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| EM68B32DVKA EM68B32DVKA-6H EM68B32DVKA-75H |
16M x 32 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3)
128Mb (16Mx8) DDR 266B (2.5-3-3)
16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| EDD51163DBH-5BLS-F EDD51163DBH-6ELS-F EDD51163DBH- |
32M X 16 DDR DRAM, 5 ns, PBGA60
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
ELPIDA MEMORY INC
|
| W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR
4M X 32 DDR DRAM, 5 ns, PBGA90
8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond
WINBOND ELECTRONICS CORP
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M51323PC K4M51323PC-SC K4M51323PC-SC1L K4M51323P |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Mobile-SDRAM
|
SAMSUNG[Samsung semiconductor]
http://
|
| IS43DR16160A-37CBL |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| V58C2256164SCE5B |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
